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  us5683 unipolar hall switch C high sensitivity inverted output 3901005683 page 1 of 11 data s heet rev 00 5 jan /1 5 features and benefits ? wi de operating voltage range from 3.5 v to 24v ? high sensitivity ? cmos technology ? chopper - stabilized amplifier stage ? low current consumption ? open drain output ? inverted output ? thin sot23 3l rohs compliant package application examples ? a utomotive, consumer and industrial ? solid - state switch ? interrupter ? current detector ? proximity detection ordering information product code temperature code package code option code packing form code us5683 e, k se aaa - 000 re legend : temperature code: e ( - 40c to 85 c) k ( - 40c to 1 25 c) package code: se =tsot - 23l option code: aa a - 000 packing form: re=reel ordering example: us5683ese - aaa - 000 - re 1 functional diagram 2 general description the melexis us5683 is a unipolar h all - e ffect switch desig ned in m ixed signal cmos technology. the device integrat e s a voltage regulator, hall sensor with advanced correlated double sampling (cds) offset cancellation system and a n open - drain output driver, all in a single package. thanks to its wide operating v oltage range and temperature range, it is suitable for use in automotive and solid state switch applications. the device is delivered in a thin small outline transistor (tsot) 3 - lead rohs compliant package . v o l t a g e r e g u l a t o r v d d g n d o u t d a m p h a l l p l a t e e s d p r o t e c t i o n e s d p r o t e c t i o n t e m p e r a t u r e c o m p e n s a t i o n d i d o c o m p r e f e r e n c e o s c i l l a t o r a n d b i a s d i g p o r
us5683 unipolar hall switch C high sensitivity inverted output 3901005683 page 2 of 11 data s heet rev 00 5 jan /1 5 table of contents 1 functional diagram ................................ ................................ ................................ ........ 1 2 general description ................................ ................................ ................................ ........ 1 3 glossary of terms ................................ ................................ ................................ .......... 3 4 absolute maximum ratings ................................ ................................ ........................... 3 5 pin definitions and descriptions ................................ ................................ ................... 3 6 general electrical specificati ons ................................ ................................ .................. 4 7 magnetic specifications ................................ ................................ ................................ . 4 8 output behaviour versus magnetic pole ................................ ................................ ...... 5 9 detailed general description ................................ ................................ ......................... 5 10 unique features ................................ ................................ ................................ ............ 5 11 performance graphs ................................ ................................ ................................ .... 6 12 test conditions ................................ ................................ ................................ ............. 7 13 application information ................................ ................................ ................................ 8 13.1 typical three - wire application circuit ................................ ................................ ...... 8 13.2 two - wire circuit ................................ ................................ ................................ ....... 8 13.3 automotive and harsh, noisy environments three - wire circuit ............................... 8 14 application comments ................................ ................................ ................................ . 8 15 standard information regarding manufacturability of melexis products with different soldering processes ................................ ................................ ........................... 9 16 e sd precautions ................................ ................................ ................................ ........... 9 17 se package information (tsot - 3l) ................................ ................................ ........... 10 18 disclaimer ................................ ................................ ................................ .................... 11
us5683 unipolar hall switch C high sensitivity inverted output 3901005683 page 3 of 11 data s heet rev 00 5 jan /1 5 3 glos sary of terms millitesla (mt), gauss units of magnetic flux density: 1mt = 10 gauss rohs restriction of hazardous substances tsot thin s mall o utline t ransistor (tsot package ) C also referred with the melexis package code se esd electro - static discharg e 4 absolute maximum r atings parameter symbol value units supply voltage v dd 2 8 v supply current i dd 50 ma output voltage v out 2 8 v output current i out 50 ma operating temperature range t a - 40 to 12 5 ? c storage temperature range t s - 50 to 150 ? c maximum junction temperature t j 165 ? c esd sensitivity C hbm ( 1 ) - 2000 v table 1 : a bsolute maximum ratings exceeding the absolute maximum ratings may cause permanent damage. exposure to absolute - maximum - rated conditions for ext ended periods may affect device reliability. 1 human body model according aec - q100 - 002 standard . 5 p in d efinitions and d escriptions pin name type function 1 vdd supply supply voltage pin 2 out output open drain output pin 3 gnd ground ground pin table 2 : p in definitions and des criptions
us5683 unipolar hall switch C high sensitivity inverted output 3901005683 page 4 of 11 data s heet rev 00 5 jan /1 5 6 general electrical specifications dc operating parameters t a = 25 o c, v dd = 12 v (unless otherwise specified) parameter symbol test conditions min typ max units supply voltage v dd operating 3.5 24 v supply current i dd b < b rp 0.5 2.5 5 ma output saturation voltage v dson i out = 20ma, b < b r p 0.3 0.5 v output leakage current i off b > b o p, v out = 24 v 0.01 10 ? a output rise time t r r l = 1k ? , c l = 20pf 0. 25 ? s output fall time t f r l = 1k ? , c l = 20pf 0. 25 ? s m aximum switching frequency f sw 5 khz power - on time ( 2 ) t on 100 ? s package thermal resistance r th single layer (1s) jedec board 301 c/w table 3 : electrica l specifications 2 the power - on time represents the time from reaching the power - on reset level to the first refresh of the output (first valid output state).value according simulation only, not subject to production test. 7 magnetic specifications dc operating parameters t a = 25 o c, v dd = 12 v (unless otherwise specified) parameter symbol test conditions min typ max units operating point b op 3.8 5.5 7.2 mt release point b rp 2 3.5 5 mt hysteresis b hyst 1.5 2 2.7 mt table 4 : magnetic specificatio ns dc operating parameters t a = - 40 o c to 125 o c, v dd = 12 v (unless otherwise specified) parameter symbol test conditions min typ max units operating point b op 3.4 7.7 mt release point b rp 1.8 5.4 mt hysteresis b hyst 1 2.8 mt table 5 : magnetic specifications
us5683 unipolar hall switch C high sensitivity inverted output 3901005683 page 5 of 11 data s heet rev 00 5 jan /1 5 8 output behaviour versus magnetic pole dc operating parameters t a = - 40 o c to 12 5 o c, v dd = 12 v parameter test conditions out north pole b > b op high null or weak magnetic field b ? 0 or b < b rp low south pole b > b o p low table 6 : output behaviour versus magnetic pole out = high ( v pu ) 9 detai led general description based on mixe d signal cmos technology, melexis us5683 is a hall - effect device with high magnetic sensitivity and inverted output . its sensitivity enables high accuracy in position sensing by the use of small air gap. the correlated double sampling (cds) technique supp ress es the offset generally observed with hall sensors and amplifier s . the cmos technology makes this advanced technique possible and contributes to smaller chip size and lower current consumption than bipolar technology. the s mall chip size is also a n imp ortant factor to minimize the effect of physical stress . this combination results in more accurate and stable magnetic characteristics , and enables faster and more precise design. th e wide operating voltage from 3.5 v to 24v a nd low current consumption mak e this device especially suitable for solid state switch applications. the output signal is open - drain type. such output allows simple connectivity with ttl or cmos logic by using a pull - up resistor tied between a pull - up voltage and the device output. 10 un ique features the us5683 exhibits unipolar magnetic switching characteristics. therefore, it operates only with one magnetic pole . unipolar switch characteristic the us5683 device is inverted output, north pole active: applying a north magnetic pole gre ater than b op facing the branded side of the package switches the output high . removing the magnetic field (b ? hyst keeps b op and b rp separated by a minimal value. this hysteresis prevents output oscillation near the switching point. o u t = h i g h f l u x d e n s i t y o u t p u t l e v e l b o p b r p 0 m t o u t s w i t c h e s t o l o w o u t = l o w o u t s w i t c h e s t o h i g h
us5683 unipolar hall switch C high sensitivity inverted output 3901005683 page 6 of 11 data s heet rev 00 5 jan /1 5 11 performance graphs 11.1 magnetic parameters vs. t a 11.2 magnetic parameters vs. v dd 11.3 v dson vs. t a 11.4 v dson vs. v dd 11.5 i dd vs. t a 11.6 i d d vs. v dd
us5683 unipolar hall switch C high sensitivity inverted output 3901005683 page 7 of 11 data s heet rev 00 5 jan /1 5 12 test conditions note : dut = device under test 12.1 supply current 12.2 output saturation voltage 12.3 output leakage current 12.4 magnetic thresholds d u t o u t g n d v d d a v d d n o t e 1 - t h e s u p p l y c u r r e n t i d d r e p r e s e n t s t h e s t a t i c s u p p l y c u r r e n t . o u t i s l e f t o p e n d u r i n g m e a s u r e m e n t . n o t e 2 - t h e d e v i c e i s p u t u n d e r m a g n e t i c f i e l d w i t h b < b r p . i d d d u t o u t g n d v d d v d d 3 . 5 / 2 4 v n o t e 1 - t h e o u t p u t s a t u r a t i o n v o l t a g e v d s o n i s m e a s u r e d a t v d d = 3 . 5 v a n d v d d = 2 4 v . n o t e 2 - t h e d e v i c e i s p u t u n d e r m a g n e t i c f i e l d w i t h b < b r p . 2 0 m a v v d s o n d u t o u t g n d v d d v d d n o t e 1 - t h e d e v i c e i s p u t u n d e r m a g n e t i c f i e l d w i t h b > b o p a 2 4 v i o f f d u t o u t g n d v d d v d d n o t e 1 - b o p i s d e t e r m i n e d b y p u t t i n g t h e d e v i c e u n d e r m a g n e t i c f i e l d s w e p t f r o m b r p m i n u p t o b o p m a x u n t i l t h e o u t p u t i s s w i t c h e d o n . n o t e 2 - b r p i s d e t e r m i n e d b y p u t t i n g t h e d e v i c e u n d e r m a g n e t i c f i e l d s w e p t f r o m b o p m a x d o w n t o b r p m i n u n t i l t h e o u t p u t i s s w i t c h e d o f f . v 1 0 k o h m s
us5683 unipolar hall switch C high sensitivity inverted output 3901005683 page 8 of 11 data s heet rev 00 5 jan /1 5 13 application information 14 application comments for proper operation, a 100nf bypass capacitor should be placed as close as possible to the device between the v dd and ground pin . for reverse v olt age protection, it is recommended to connect a resistor or a diode in series with the v dd pin. when using a resistor, three points are important: - t he resistor has to limit the reverse current to 50ma maximum (v cc / r1 ? 50ma) - the resulting device supply voltage v dd has to be higher th an v dd min (v dd = v cc C r1.i dd ) - the resistor has to withstand the power dissipated in reverse voltage condition (p d = v cc 2 / r1) when using a diode, a reverse current cannot flow and t he voltage drop is almost constant ( ? 0.7v). therefore, a 100 ? /0.25w re sistor for 5v application and a diode for higher supply voltage are recommended. both solutions provide the required reverse voltage protection. when a weak power supply is used or when the device is intended to be used in noisy environment, it is recomme nded that figure 1 3 .3 from the applicati on information section is used. the low - pass filter formed by r1 and c1 and the zener diode z1 bypass the distu rbances or voltage spikes occurring on the device supply voltage v dd . the diode d1 provides additional re verse voltage protection . 13.1 typical three - wire application circuit 13.2 two - wire circuit note: with this circuit, precise on and off currents can be detected using only two connectin g wires. the resistors rl and rb can be used to bias the input current. refer to the part specifications for limiting values. b rp : i off = i r + i dd = v dd /r b + i dd b op : i on = i off + i out = i off + v dd /r l 13.3 automotive and harsh, noisy environmen t s three - wire circuit c 1 1 0 0 n f v d d v s s o u t c 2 4 . 7 n f r p u 1 0 k v c c v o u t r b r l * i d d i i n i r i o u t v d d v d d v s s o u t c 1 1 0 0 n f v d d v s s o u t c 2 4 . 7 n f r p u 1 0 k v c c v o u t r 1 1 0 0 o h m s z 1 d 1
us5683 unipolar hall switch C high sensitivity inverted output 3901005683 page 9 of 11 data s heet rev 00 5 jan /1 5 15 standard information regarding manufacturability of melexis products with different soldering processe s our products are classified and qualified regarding soldering technology, solderability and moisture sensitivity level accor ding to following test methods: reflow soldering smds ( s urface m ount d evices) ? ipc/jedec j - std - 020 moisture/reflow sensitivity classification for nonhermetic solid state surface mount devices (classification reflow profiles according to table 5 - 2) ? eia/je dec jesd22 - a113 preconditioning of nonhermetic surface mount devices prior to reliability testing (reflow profiles according to table 2) wave soldering smds ( s urface m ount d evices) and thds ( t hrough h ole d evices) ? en60749 - 20 resistance of plastic - enca psulated smds to combined effect of moisture and soldering heat ? eia/jedec jesd22 - b106 and en60749 - 15 resistance to soldering temperature for through - hole mounted devices iron soldering thds ( t hrough h ole d evices) ? en60749 - 15 resistance to soldering temp erature for through - hole mounted devices solder ability smds ( s urface m ount d evices) and thds ( t hrough h ole d evices) ? eia/jedec jesd22 - b102 and en60749 - 21 solderability for all soldering technologies deviating from above mentioned standard conditions ( regarding peak temperature, temperature gradient, temperature profile etc) additional classification and qualification tests have to be agreed upon with melexis. the application of wave soldering for smds is allowed only after consulting melexis regardi ng assurance of adhesive strength between device and board. melexis is contributing to global environmental conservation by promoting lead free solutions. for more information on qualifications of rohs compliant products (rohs = european directive on the restriction of the use of certain hazardous substances) please visit the quality page on our website: http://www.melexis.com/quality.aspx 16 e sd precautions electronic semiconductor products are sensitive t o electro static discharge (esd). always observe electro static discharge control procedures whenever handling semiconductor products.
us5683 unipolar hall switch C high sensitivity inverted output 3901005683 page 10 of 11 data s heet rev 00 5 jan /1 5 17 se package information (tsot - 3l) 2 . 7 5 b s c 1 . 6 0 b s c 1 . 9 0 b s c 2 . 9 0 b s c 0 . 3 0 0 . 4 5 0 . 8 8 + 0 . 0 2 - 0 . 0 3 1 . 0 0 m a x 0 . 9 5 b s c 0 . 0 7 5 + 0 . 0 2 5 - 0 . 0 5 0 s e a t i n g p l a n e 0 . 5 7 5 r e f . 0 . 4 0 + / - 0 . 1 0 0 . 5 0 b s c 0 . 1 2 7 + 0 . 0 2 3 - 0 . 0 0 7 0 . 1 5 0 . 2 0 w i t h p l a t i n g ~ b a s e m e t a l s e c t i o n b - b b b n o t e s : 1 . a l l d i m e n s i o n s a r e i n m i l l i m e t e r s 2 . o u t e r m o s t p l a s t i c e x t r e m e w i d t h d o e s n o t i n c l u d e m o l d f l a s h o r p r o t r u s i o n s . m o l d f l a s h a n d p r o t r u s i o n s s h a l l n o t e x c e e d 0 . 1 5 m m p e r s i d e . 3 . o u t e r m o s t p l a s t i c e x t r e m e l e n g t h d o e s n o t i n c l u d e m o l d f l a s h o r p r o t r u s i o n s . m o l d f l a s h a n d p r o t r u s i o n s s h a l l n o t e x c e e d 0 . 2 5 m m p e r s i d e . 4 . t h e l e a d w i d t h d i m e n s i o n d o e s n o t i n c l u d e d a m b a r p r o t r u s i o n . a l l o w a b l e d a m b a r p r o t r u s i o n s h a l l b e 0 . 0 7 m m t o t a l i n e x c e s s o f t h e l e a d w i d t h d i m e n s i o n a t m a x i m u m m a t e r i a l c o n d i t i o n . 5 . d i m e n s i o n i s t h e l e n g t h o f t e r m i n a l f o r s o l d e r i n g t o a s u b s t r a t e . 6 . d i m e n s i o n o n s e c t i o n b - b a p p l i e s t o t h e f l a t s e c t i o n o f t h e l e a d b e t w e e n 0 . 0 8 m m a n d 0 . 1 5 m m f r o m t h e l e a d t i p . 7 . f o r m e d l e a d s h a l l b e p l a n a r w i t h r e s p e c t t o o n e a n o t h e r w i t h 0 . 0 7 6 m m a t s e a t i n g p l a n e . m a r k i n g : t o p s i d e : u y w w ( u : p a r t n u m b e r u s 5 6 8 3 ; y : y e a r ( l a s t d i g i t ) w w = c a l e n d a r w e e k # ) b o t t o m s i d e : x x x x ( x x x x : l o t n u m b e r ( l a s t 4 d i g i t s ) s e e n o t e 2 s e e n o t e 3 s e e n o t e 5 1 2 r e f . t y p . 0 . 3 5 + 0 . 0 5 - 0 . 1 0 0 . 3 0 0 . 4 5 0 . 1 0 r . m i n . 0 . 2 0 4 + / - 4 0 . 1 0 r . m i n . s e e n o t e 6 s e a t i n g p l a n e t o p v i e w e n d v i e w s i d e v i e w h a l l p l a t e l o c a t i o n n o t e s : 1 . a l l d i m e n s i o n s a r e i n m i l l i m e t e r s t o p v i e w e n d v i e w p a c k a g e l i n e 0 . 2 8 1 . 5 1 0 . 8 0
us5683 unipolar hall switch C high sensitivity inverted output 3901005683 page 11 of 11 data s heet rev 00 5 jan /1 5 18 disclaimer devices sold by melexis are covered by th e warranty and patent indemnification provisions appearing in its term of sale. melexis makes no warranty, express, statutory, implied, or by description regarding the information set forth herein or regarding the freedom of the described devices from pate nt infringement. melexis reserves the right to change specifications and prices at any time and without notice. therefore, prior to designing this product into a system, it is necessary to check with melexis for current information. this product is intende d for use in normal commercial applications. applications requiring extended temperature range, unusual environmental requirements, or high reliability applications, such as military, medical life - support or life - sustaining equipment are specifically not r ecommended without additional processing by melexis for each application. the information furnished by melexis is believed to be correct and accurate. however, melexis shall not be liable to recipient or any third party for any damages, including but not l imited to personal injury, property damage, loss of profits, loss of use, interrupt of business or indirect, special incidental or consequential damages, of any kind, in connection with or arising out of the furnishing, performance or use of the technical data herein. no obligation or liability to recipient or any third party shall arise or flow out of melexis rendering of technical or other services. ? 200 5 melexis nv. all rights reserved. for the latest version of this document, g o to our website at www.melexis.com or for additional information contact melexis direct: europe, africa: americas: asia: phone: +32 1367 0495 phone: +1 248 - 306 - 5400 phone: +32 1367 0495 e - mail: sales_eur ope@melexis.com e - mail: sales_usa@melexis.com e - mail: sales_asia@melexis.com iso/ts 16949 and iso14001 certified


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